北京清华大学高精尖研究中心
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Innovation Is
The Ability To See Change As An
Opportunity - Not A Threat
创新能力就是将变化看成机遇,而非威胁
About us / About us
Nowadays, at the turning period of the global industry restructuring and revolution, the Industry 4.0 is ready to come out. Based on the novel electrical and information technologies, such as smart sensors, data storage, and flexible electronics etc. , the production method and lifestyle of human is deeply transformed by IoT, Big Data, next-gen Network, and wearable devices. In China, with the publication of “National Development and Promotion Outline of Integrated Circuit Industry”, the integrated circuit industry is experiencing the key stage of burst development. In the meantime, as the national center of the technology innovation, Beijing is exploiting current advantages, building optimal development environment, and promoting interconnection between academic research and industrial application, which would lead a great leap forward development of the future chip industry.Beijing Innovation Center for Future Chip (ICFC) has been establish in 2015, with collaboration of Tsinghua Uni...
Case / Research Achievements
说明: Prof. Shaojun Wei Gives a Keynote Speech at the 54th Design Automation Conference, Team Essay S...
说明: On May 12,Professor He Qian and Huaqiang Wu’s research group at the Institute of Microelectronics, p...
说明: The “12thFive-Year Plan” Science and Technology Innovation Achievement Exhibition under the theme of...
说明: Recently, the Center’s research team headed by Prof. Liu Yongpan and Prof. Yang Huazhong has complet...
Center News / News 查看更多>>
26 2018 - 04 -
点击次数: 16
Zheng You Meets with the Vice President of SK Hynix: Taking Steps to S...
28 2017 - 12 -
点击次数: 0
The Second Session of Future Chip Forum Held in Tsinghua Universi...
21 2017 - 06 -
点击次数: 13
The Launch of the 1st Future Chip Forum for Doctorate StudentsOn ...
06 2017 - 03 -
点击次数: 70
The Center hosted the high-end forum under the theme of “Future Chip 2...
News / Research Progress
The Center has made progress in the study of voltage control of magnetism effect
Recently, Prof. Song Cheng et al. of the Center has published a paper entitled “Recent progress in voltage control of magnetism: Materials, mechanisms, and performance” in Progress in Materials Science, a famous academic journal in the materials field, offering a comprehensive review of the recent progress in the field of voltage control of magnetism. The picture shows the electron orbit switch of ferromagnetic / ferroelectric thin film interface and the gate voltage regulation of physical performance Memory is one of the most basic and important components of modern integrated circuits, and its performance is a vital indicator for assessing the microelectronics technology level. With the development of industry and the increased demand, memory based on magnetic properties and electrical properties of materials has been widely used. However, the energy consumption for magnetic field-based magnetic recording writing and erasure is still high, and the critical spin polariz...
2017 - 03 - 06
The Center makes strides in skyrmion-based topological spintronics
Recently, the Center’s  research group headed by Jiang Wanjun systematically studied the dynamic behavior of skyrmion driven by spin current, with the related research results entitled “Direct observation of skyrmion Hall effect”published in Nature Physics. In this study, the Hall effect of topological charge was successfully observed at room temperature using micro-magnetic simulation and MOKE microscope imaging technology. Similar to the Hall effect of the traditional charge in the magnetic field, the study shows that the topological charge is clustered on the side of the sample due to the topological Magnus force, thus showing the macroscopic skyrmion Hall effect. Unlike the chiral bulk material for the Center’s inversion broken-symmetry, this result is achieved using the interface’s inversion symmetry breaking and strong spin-orbit coupling in the low-dimensional artificial magnetic system of nonmagnetic heavy metal / ultrafine ferromagnet / insulator heter...
2017 - 03 - 06
Three major projects of the Center are included into the Key Research and Development Program of Chi
Recently, the Center’s research team has been mainly responsible for the first batch of projects under the national key R & D program, including the “Distributed Reconfigurable Remote Sensing Technology Based on Micro/nano Spacecraft” led by the team headed by Prof. You Zheng, and the “Basic Research in the nano-memory three-dimensional integration” led by the team headed by Prof. Qian He and the “Design, regulation and prototype device exploration of new two-dimensional quantum system” led by the team headed by Prof. Duan Wenhui.
2017 - 03 - 06
Center Address
Address: Beijing Innovation Center for Future Chip, Building A, 3# Heqing Road, Haidian District, Beijing, China
Telephone: 010-62788711
WeChat: THU-ICFC
北京清华大学高精尖研究中心
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