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The Center has made progress in the study of voltage control of magnetism effect

Date: 2017-03-06
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Recently, Prof. Song Cheng et al. of the Center has published a paper entitled “Recent progress in voltage control of magnetism: Materials, mechanisms, and performance” in Progress in Materials Science, a famous academic journal in the materials field, offering a comprehensive review of the recent progress in the field of voltage control of magnetism. 


The Center has made progress in the study of voltage control of magnetism effect

The picture shows the electron orbit switch of ferromagnetic / ferroelectric thin film interface and the gate voltage regulation of physical performance

 

Memory is one of the most basic and important components of modern integrated circuits, and its performance is a vital indicator for assessing the microelectronics technology level. With the development of industry and the increased demand, memory based on magnetic properties and electrical properties of materials has been widely used. However, the energy consumption for magnetic field-based magnetic recording writing and erasure is still high, and the critical spin polarization current density of new-generation magnetic random memory based on spin transfer torque for magnetic information writing remains persistently high. There is still a gap with the maximum current density which can be withstood by transistors with corresponding semiconductor process level. Therefore, there is an urgent need to develop information storage technology with lower energy consumption.

Electronically controlled magnetic effect harnesses the external electric field to control the magnetic properties of materials, thereby achieving the purpose of data storage. In this process, the magnetic change does not require an external magnetic field, and no current passes through the whole process (gate electrode only provides an electric field), which can greatly curtail energy consumption. Therefore, it is expected to significantly promote the development of high-speed, high-density, low-power and non-volatile memory.

 

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