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Etching of Semiconductor Devices

Date: 2018-04-09
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Etching of Semiconductor Devices

I. Details of the lecture 

Topic: Etching of Semiconductor Devices

Time: 10:00, April 10th, 2018

Location: Lecture Hall, F2, FIT Building Tsinghua University

Speaker: Thorsten Lill   VP of Emerging Etch Technologies and Systems at Lam Research

II. Introduction to the speaker 

Dr. Thorsten Lill is VP of Emerging Etch Technologies and Systems at Lam Research. He holds a Ph.D. in Physics from the Albert-Ludwigs-University in Freiburg, Germany.

In Freiburg, he studied collisions of C60 and C70 fullerenes with crystalline surfaces in ion and laser beam experiments. After his graduate studies, he spent time as a post doc researcher at the Chemistry Department at the Argonne National Laboratory working on sputtered metal cluster experiments with Secondary Neutral Mass Spectrometry with laser post ionization.

He has published over 130 articles and conference papers including first author articles in Physical Review Letters and Science and holds 62 granted patents in the fields of plasma and ion beam sources, plasma etching, Atomic Layer Etching, CVD, reactor design, and diagnostics.

III. Content of lecture 

Plasma etching or Reactive Ion Etching (RIE) is the workhorse for patterning of semiconductor devices since the early 1980-ies when it replaced wet etching in manufacturing. Today, RIE is reaching levels of performance which were unimaginable back then. At the same time, etching technologies such as Atomic Layer Etching (ALE), radical, dry vapor and Ion Beam Etching are finding their way into manufacturing for certain applications.

We will present an overview of dry etching technologies used in semiconductor manufacturing. The emphasis is on the elementary surface processes and how they impact the performance on the wafer. We will start from less complex etching technologies which use just one kind of etching species, such as neutrals, radicals or ions. Then we combine these techniques into cycling processes which leads to the discussion of ALE. The highest level of complexity is reached in RIE with simultaneous species fluxes. Reactor designs for the various etching technologies and process control will be covered. Finally, and outlook into the future of semiconductor device etching will be given

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