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Associated Oxide Nanoelectronics

Date: 2018-05-27
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Associated Oxide Nanoelectronics

I. Details of the lecture 

Topic: Associated Oxide Nanoelectronics

Time: 3:30 p.m., March 30, 2018

Location: Tsinghua University Science Building B315

Speaker: Cheng Guanglei   Professor, School of Physical Sciences, University of Science and Technology of China

II. Introduction to the speaker 

Prof. Cheng Guanglei graduated from the Department of Modern Physics, University of Science and Technology of China, and received his doctorate from the University of Pittsburgh in 2011. He conducted postdoctoral research at the University of Pittsburgh from 2011 to 2014 and was employed as the Research Assistant Professor at the Department of Physics of the University of Pittsburgh and the Pittsburgh Quantum Institute from 2014 to 2016. In the autumn of 2016, he was selected by Organization Department of the Communist Party of China under the Thousand Youth Talents Plan to serve at the School of Physical Sciences, University of Science and Technology of China. Prof. Cheng Guanglei chiefly studies oxide nanoelectronics and cryogenic scanning probe microscopy.

III. Content of lecture 

As a new crossover discipline, associated oxide nanoelectronics combines the two fields of associated oxide physics and semiconductor nanoelectronics. In this report, I first introduce the background of associated oxide nanoelectronics, and then use two examples to illustrate the research characteristics of this field. In the first example, I introduce the preparation of superconducting single-electron transistors at the LAO/STO level and have observed experimental evidence of superconducting electron pairing [1], and verified a theory that was a moot point for half a century. This clarifies that nano-scale devices provide an important tool for studying electronic correlation. In the second example, I focus on the quantum transport in oxide electron/electron waveguide, explaining that electron correlation enriches the properties of nano-scale devices [2]. Finally, I introduce some recent advances we have made in this field, including the one-dimensional root of tunable electron-electron interaction [3] and quantum oscillations at the oxide interface [4].


[1] Cheng et al., Nature 521, 196 (2015)
[2] Annadi et al., arXiv:1611.05127
[3] Cheng et al., Phys. Rev. X 6, 041042 (2016)
[4] Cheng et al., Phys. Rev. Lett. 120, 076801 (2018)


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