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Creating Semiconductor Devices at the Atomic Scale

Date: 2017-11-10
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Creating Semiconductor Devices at the Atomic Scale


I. Details of the lecture 

Topic: Associated Oxide Nanoelectronics

Time: 10:30, Nov 22, 2017

Location: Lecture Hall, 2F, FIT, Tsinghua University

Speaker: Richard A. Gottscho   Lam Research, Executive Vice President and Chief Technology Officer

II. Introduction to the speaker 

Rick and his global team are bringing together Lam’s technology vision, pursuing disruptive technologies to enable step-function improvements in performance and productivity and accelerating opportunity for customers.

He’s served at various director and vice presidential levels since joining the company in January 1996, most recently as head of the Global Product Group. Prior to joining Lam Research, Rick was a member of Bell Laboratories for 15 years, where he headed research departments in electronics materials, electronics packaging, and flat panel displays. He earned his Ph.D. and B.S. degrees in Physical Chemistry from the Massachusetts Institute of Technology and Pennsylvania State University. In 2016, Rick was inducted into the National Academy of Engineering.

III. Content of lecture 

Deposition and etching of thin films are more critical than ever to the formation of nanometer-sized features in the manufacturing of integrated circuits. As features shrink to 3 nm and below, deposition and etching techniques are needed to extend the capability of patterning, which is only the first step in the fabrication sequence. Likewise, as devices scale vertically, for example in 3D NAND and cross-point phase change memories, the fabrication of complex structures relies more on advances in deposition and etching than in lithography. Specifically, atomic layer deposition (ALD) and atomic lay eretching (ALE) are multi-step processes used to place and remove ultra-thin layers of material where desired. In this talk, I'll explore the chemical and physical mechanisms that enable atomic scale engineering that in turn enables future advances in electronic systems.

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