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Everything You Wish to Know About Memristors But are Afraid to Ask

Date: 2017-08-23
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Everything You Wish to Know About Memristors But are Afraid to Ask

I. Details of the lecture 

Topic: Everything You Wish to Know About Memristors But are Afraid to Ask

Time:14:30-16:00pm, Sep. 6th, 2017

Location: Tsinghua University

Speaker: LEON CHUA   Professor, Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley

II. Introduction to the speaker 

Leon Chua is widely known for his invention of the Memristor and the Chua’s Circuit. His research has been recognized internationally through numerous major awards, including 16 honorary doctorates from major universities in Europe and Japan, and 7 USA patents, He was elected as Fellow of IEEE in 1974, a foreign member of the European Academy of Sciences (Academia Europea) in 1997, a foreign member of the Hungarian Academy of Sciences in 2007, and an honorary fellow of the Institute of Advanced Study at the Technical University of Munich, Germany in 2012. He was honored with many major prizes, including the Frederick Emmons Award in 1974, the IEEE Neural Networks Pioneer Award in 2000, the first IEEE Gustav Kirchhoff Award in 2005, the International Francqui Chair (Belgium) in 2006, the Guggenheim Fellow award in 2010, Leverhulme Professor Award (United Kingdom) during 2010-2011, and the EU Marie curie Fellow award, 2013.

III. Content of lecture 

This talk clarifies and demystifies numerous ambiguities, misconceptions, and erroneous statements concerning memristors. Some fundamental circuit-theoretic-properties that will be proved include:

All non-volatile resistive swiching memories are continuum, aka analog, memories.

Non-volatile memristors do not have DC V-I curves. 

Non-volatile memristors may be used as resistive switched, or synapses.

This talk presents a new fundamental and general theorem which asserts that all nonvolatile resistive switching memories, aka memristors, must exhibit a flat power-off plot (POP), regardless of the device’s internal material and structure.

The flat POP signature of nonvolatility is essential for understanding and explaining practically all heretofore inexplicable empirical phenomena, such as why the conductance of all nonvolatile memristors, including RRAM, Phase Change Memory, Ferroelectric Memory, Atomic Switch, etc., can be tuned continuously over a continuum range by applying voltage, or current, pulses of amplitude A and width w, provided A and w is greater than some positive constant K. In particular, this theorem implies that one can switch faster (smaller w) by increasing the pulse height A, independent of the device structure, or material. Numerous other widely observed but yet unexplained phenomena can also be easily explained. But most important, it can predict outcomes of gedanken experiments and help resolve future paradoxes involving non-volatile memristors.

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