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SiGe for the next generation electronic and photonic devices

Date: 2017-06-30
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SiGe for the next generation electronic  and photonic devices

I. Details of the lecture 

Topic: SiGe for the next generation electronic and photonic devices

Time: 10:00-11:30am, July 3, 2017

Location: Room 311, Institute of Microelectronics,Tsinghua University

Speaker: Guangrui(Maggie) Xia   Assistant Professor, Dept. of Materials Engineering, the University of British Columbia, Vancouver, Canada

II. Introduction to the speaker 

Prof. Guangrui Xia received her B.S. in Materials Science and Engineering from Tsinghua University, and received M.S. and Ph.D. in Electrical and Computer Engineering from the Massachusetts Institute of Technology. After that, she worked at IBM Semiconductor Research and Development Center for 2 years, where her research focused on semiconductor processing modeling and simulations for advanced CMOS technologies. She was the key process simulation and modeling researcher at IBM for 32 nm node CMOS modules including: embedded-SiGe, embedded-Si:C, ultra-shallow junction and high-k metal gate technology.

She joined the Department of Materials Engineering at the University of British Columbia, Vancouver, Canada in 2008. Dr. Xia is an expert in SiGe materials and devices. Her group has studied extensively on Si-Ge interdiffusion, dopant diffusion and segregation in SiGe and SiGe:C systems for applications in CMOS and HBTs. In recent years, her research interests have expanded to Ge lasers and monolithic III-Vlaser integration on Si, through-Si-vias (TSVs) for 3D integration of ICs, GaN HEMTs, Raman spectroscopy and 2D materials. 

Dr. Xia has published more than 30 research papers and 10 conference papers in top research journals and conferences. Her studies on Si-Ge interdiffusion have been widely used and implemented in the state-of-the-art process simulation tools including Intel R&D’s in-house process simulation tool, Crosslight Software’s  CSUPREMTM, Synopsys’s Sentaurus  ProcessTM (the leading commercial 3D process simulation tool in the semiconductor industry) and Lumerical Solutions’ DEVICETM for structure and process design of next generations of semiconductor devices. Dr. Xia has been invited to give research seminars by major semiconductor manufacturing companies including Intel, IBM, Texas Instruments, Analog Devices, and Semiconductor Manufacturing International Corporation. She has been serving as an editor of Materials Science in Semiconductor Processing since 2013.

III. Content of lecture 

This talk will review the research efforts in Dr. Xia's group in the following areas:

1. As a result, SiGe including SiGe:C alloys and Ge are widely used for mobility, strain and energy bandgap engineering in major semiconductor devices such as metal oxide semiconductor field effect transistors (MOSFETs), hetero-junction bipolar transistors (HBTs), SiGe quantum wells and dots, modulators, and Ge lasers.

When the base material changes from Si to SiGe/SiGe:C alloys or Ge and often with the introduction of stress and dislocations, many mass transport behaviors change including dopant diffusion, segregation and Si-Ge interdiffusion. The addition of carbon, dislocations, stress and Ge makes the physical picture quite complicated. Understanding these phenomena are crucial in the device design and processing of SiGe based devices.

2. Ge has been widely used in photodetectors and electro-absorption modulators. For Si-compatible lasers, Ge can be used as 1) transition layers between common lasing materials such as InGaAs and AlGaAs and Si due to its small lattice mismatch to them and the ease of integration with Si and 2) a lasing material thanks to doping and bandgap engineering.

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