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Oxide Nano-Electronics: Device Circuit Interactions and Near-OFF State TFT Architectures

Date: 2017-06-12
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Oxide Nano-Electronics: Device Circuit Interactions  and Near-OFF State TFT Architectures

I. Details of the lecture 

Topic: Oxide Nano-Electronics: Device Circuit Interactions  and Near-OFF State TFT Architectures

Time:10:00am, June 13, 2017

Location: 10-206 Rohm Building, Tsinghua University

Speaker: Arokia Nathan   Chair of Photonic Systems and Displays in the Department of Engineering, Cambridge University

II. Introduction to the speaker 

Professor Arokia Nathan holds the Chair of Photonic Systems and Displays in the Department of Engineering, Cambridge University. He received his PhD in Electrical Engineering from the University of Alberta. Following post-doctoral years at LSI Logic Corp., USA and ETH Zurich, Switzerland, he joined the University of Waterloo where he held the DALSA/NSERC Industrial Research Chair in sensor technology and subsequently the Canada Research Chair in nano-scale flexible circuits. He was a recipient of the 2001 NSERC E.W.R. Steacie Fellowship. In 2006, he moved to the UK to take up the Sumitomo Chair of Nanotechnology at the London Centre for Nanotechnology, University College London, where he received the Royal Society Wolfson Research Merit Award. He has held Visiting Professor appointments at the Physical Electronics Laboratory, ETH Zürich and the Engineering Department,Cambridge University, UK. He has published over 500 papers in the field of sensor technology and CAD, and thin film transistor electronics, and is aco-author of four books. He has over 60 patents filed/awarded and has founded/co-founded four spin-off companies. He serves on technical committees and editorial boards in various capacities. He is a Chartered Engineer (UK),Fellow of the Institution of Engineering and Technology (UK), Fellow of IEEE(USA), and an IEEE/EDS Distinguished Lecturer.

III. Content of lecture 

The oxide semiconductor is becoming a key material for future electronics because of their wide band gap, hence high transparency and low OFF current, compared with the ubiquitous silicon thin-film technology. This talk will review the new generation of applications of oxides ranging from large area electronics to the newly emerging Internet of Things. While the oxide transistor continues to evolve, producing devices with higher mobility, steepersub-threshold slope and lower threshold voltage, practical circuits are constrained by issues related to non-uniformity, electrically- and illumination-induced instability, and temperature dependence. We will discuss the critical design considerations to show how device-circuit interactions should be handled and how compensation methods can be implemented. In particular, the quest for low power becomes highly compelling in newly emerging application areas related to wearable devices in the Internet of Things.We will discuss thin-film transistor operation near the OFF state, driven by the pivotal requirement of low supply voltage and ultralow power.

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