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Mobile Irons, Transport and Redox Process in Memristive Devices for Next Generation Memories and Bey

Date: 2017-05-24
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Mobile Irons, Transport and Redox Process in Memristive Devices for Next Generation Memories and Bey

I. Details of the lecture 

Topic: Mobile Irons, Transport and Redox Process in Memristive Devices for Next Generation Memories and Bey

Time: 10:30am-12:00pm, May 26, 2017

Location: Room 312, Institute of Microelectronics

Speaker: Ilia Valov  Principle Investigator at the Research CentreJuelich and RWTH-Aachen University, Germany

II. Introduction to the speaker 

Dr. rer. nat. Ilia Valov is Principle Investigator at the Research Centre Juelich and RWTH-Aachen University, Germany. His research interests and activities are concentrated on electrochemical and, in general, physicochemical phenomena at the nano and sub-nanoscale, such as mass and charge transport, point defects, surfaces and interfaces with a focus on resistive switching memories, memristive devices andenergy conversion. He serves as a reviewer for Nature, Science, Nature journals, Wiley, Elsevier, IEEE, AIP, RSC, IOP, ACS etc. and have guest edited special issues on nanoscale electrochemistry and memristors for different journals. He published over 80 original research papers, 2 bookchapters and holds 6 patents. h-index 26.

III. Content of lecture 

Redox-based resistive switching memories (ReRAM) developed rapidly in the last decade as most promising candidates for nanoelectronic industry for new type non-volatile memory devices fulfilling the demands for green IT i.e. low power consumption, high operation speed and integration density,  scalability and reliability. Recent achievements have clearly demonstrated the diversity of applications these devices can be used – for neuromorphic applications, alternative computing and logic operations, selector elements. All these developments are supported by system functionalities having their origin in the electrochemical nature of the ReRAM cells.

In this talk the newest achievements in the microscopic understandings of the processes responsible for the ReRAM functionalities will be presented. It will be shown that different ions (both cations and anions) are mobile and can undergo electrochemical transformation and thus, contribute to the resistive switching. The effects of moisture will be presented and their importance forboth ECM and VCM ReRAMs will be discussed. The influence of different electrodematerials in terms of electrocatalytic activity and passivation behavior will be highlighted. Finally it will be shown how the nanobattery effect relates to neuromorphic applications.  

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