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Current status and future aspect of spin-orbit torque materials for nonvolatile memory applications

Date: 2017-04-28
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Current status and future aspect of spin-orbit torque materials for nonvolatile memory applications

I. Details of the lecture 

Topic: Associated Oxide Nanoelectronics

Time: 3:30 p.m., March 30, 2018

Location: Room 10-208, Rohm Building, Tsinghua University

Speaker: Kim Young Keun  Professor of Materials Science and Engineering at Korea University, Seoul, Korea 

II. Introduction to the speaker 

Professor Kim is a faculty member of Materials Science and Engineering at Korea University, Seoul, Korea since 2000. He received the B.S. (1985) and M.S. (1987) degrees in Metallurgical Engineering from Seoul National University, and the Ph.D. degree (1993) in Materials Science and Engineering from MIT. Before he joined Korea University, he worked for Quantum Corporation in USA and Samsung Electro-Mechanics in Korea. From 2008 to 2011, he served as the President of Research and Business Foundation of Korea University in charge of managing university research funds, intellectual property rights and technology transfer. He was an Advisory Staff Member of Presidential Advisory Council on Education, Science and Technology of Korea in 2012. Currently, he is the Director of Center for Spin-Orbitronic Materials. He served a Member of Board of Directors of the Korean Institute of Metals and Materials (KIM). Currently, he is an Editorial Board Member of Scientific Reports and IEEE Transactions on Magnetics, a Council Member of the Asian Union of Magnetic Societies (AUMS), a Steering Committee Member of the International Symposium on Advanced Magnetic Materials and Applications, and the VP for Business Affairs of the Korean Magnetics Society (KMS). He is a Fellow member of the Korean Academy of Science and Technology (KAST). He has published over 230 peer-reviewed journal papers, invented over 60 registered patents, and delivered over 100 invited talks. Prof. Kim’s research interests include novel thin films and nanostructured materials development for biomedical and magnetic memory and applications.

III. Content of lecture 

Switching of magnetization direction by electrical current with high speed and low energy has drawn attention due to its applications including magnetic random access memory (MRAM). Lately, a new switching principle has been discovered in various sets of nonmagnet (NM)/ferromagnet(FM)/oxide trilayer structures such as Pt/Co and W/CoFeB with MgO capping where in-plane current injection induces magnetization reversal in perpendicularly magnetized layer. This switching is known to be resulted from the so called ‘spin-orbit torque (SOT)’. Therefore, a large number of research efforts are being pursued worldwide on the understanding the underlying physics as well as on the search for new sets of FM/NM material systems exhibiting high SOT efficiencies. To be practical for high-density memory applications, there are various engineering issues to be resolved which are related with materials and processing. In this talk, I will discuss the current status and future aspects of MRAM and SOT materials research.

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